Terahertz wireless communication using GaAs transistors as detectors. Issue 4 (1st February 2014)

• Record Type: Journal Article
• Authors: Tohmé, L.; Blin, S.; Ducournau, G.; Nouvel, P.; Coquillat, D.; Hisatake, S.; Nagatsuma, T.; Pénarier, A.; Varani, L.; Knap, W.; Lampin, J.‐F.
• Is Part Of: Electronics letters. Volume 50:Issue 4(2014)
• Page Start: 323
• Page End: 325
• Publication Date: 2014-02-01
• Subjects: gallium arsenide -- high electron mobility transistors -- III‐V semiconductors -- millimetre wave detectors -- millimetre wave transistors -- radiocommunication -- terahertz wave detectors; terahertz wireless communication -- terahertz detector -- high data rate wireless communication -- terahertz frequency carrier -- pseudomorphic high electron mobility transistors -- bit rate 8.2 Gbit/s -- frequency 0.2 THz to 0.3087 THz -- GaAs; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.3702
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The detection of high data‐rate wireless communication using a terahertz‐frequency carrier, and a GaAs transistor as a detector, is reported. Communications are investigated around 0.2 and 0.3087 THz. For the first time, an error‐free transmission at data rates up to 8.2 Gbit/s is demonstrated, using a carrier frequency of 0.3087 THz.