1060 nm single‐mode vertical‐cavity surface‐emitting laser operating at 50 Gbit/s data rate. Issue 13 (1st June 2017)

• Record Type: Journal Article
• Authors: Simpanen, E.; Gustavsson, J.S.; Haglund, E.; Haglund, E.P.; Larsson, A.; Sorin, W.V.; Mathai, S.; Tan, M.R.
• Is Part Of: Electronics letters. Volume 53:Issue 13(2017)
• Page Start: 869
• Page End: 871
• Publication Date: 2017-06-01
• Subjects: gallium arsenide -- III‐V semiconductors -- surface emitting lasers -- laser cavity resonators -- semiconductor lasers -- laser modes -- laser beams -- optical interconnections -- optical fibre communication -- optical design techniques -- amplitude shift keying; single‐mode vertical cavity surface emitting laser -- high‐speed modulation -- single‐mode emission -- side‐mode‐suppression -- energy dissipation -- threshold current -- long‐reach optical interconnects -- light source -- wavelength 1060 nm -- bit rate 50 Gbit/s -- current 0.2 mA; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2017.1165
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : An energy efficient 1060 nm GaAs‐based oxide‐confined vertical‐cavity surface‐emitting laser designed for high‐speed modulation and single‐mode emission has been developed. A record data rate of 50 Gbit/s at an energy dissipation of 100 fJ/bit is demonstrated for a device with >50 dB side‐mode‐suppression and 0.2 mA threshold current, making this laser a promising light source for long‐reach optical interconnects.