CMOS wireless stress sensor IC with 256‐cell sensing array for ultra‐thin applications. Issue 20 (9th September 2016)

• Record Type: Journal Article
• Authors: Jiang, Hanjun; Wang, Zheyao; Yang, Shujie; Liu, Heng; Wang, Zhihua
• Is Part Of: Electronics letters. Volume 52:Issue 20(2016)
• Page Start: 1660
• Page End: 1661
• Publication Date: 2016-09-09
• Subjects: CMOS integrated circuits -- radio transmitters -- sensor arrays -- stress measurement -- readout electronics -- analogue‐digital conversion -- electric sensing devices; CMOS wireless stress sensor IC -- ultra‐thin applications -- 256‐cell stress sensing array -- current‐based sensor readout circuit -- SAR ADC -- wireless transmitter -- orthogonally placed current source pair -- normal stress measurement -- shear stress measurement -- sensing nonlinearity -- facial expression changes detection -- size 0.18 mum -- word length 12 bit -- frequency 432 MHz; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2016.2622
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A wireless stress sensor integrated circuit (IC) has been implemented in 0.18 μm CMOS technology. The IC is composed of a 256‐cell stress sensing array, the current‐based sensor readout circuit, a 12 bit successive approximation (SAR) ADC and a 432 MHz wireless transmitter. The stress sensor employs orthogonally placed current source pair to measure the normal and shear stresses. The chip is backlapped to 35 μm for ultra‐thin applications such as human skin stress distribution measurement. The measured sensing nonlinearity is below 0.7%. Experiments show that the implemented IC can be used to detect the facial expression changes.