Hybrid photo‐receiver based on SiGe heterojunction photo‐transistor for low‐cost 60 GHz intermediate‐frequency radio‐over‐fibre applications. Issue 8 (1st April 2015)

• Record Type: Journal Article
• Authors: Viana, C.; Tegegne, Z.G.; Rosales, M.; Polleux, J.L.; Algani, C.; Lecocq, V.; Lyszyk, C.; Denet, S.
• Is Part Of: Electronics letters. Volume 51:Issue 8(2015)
• Page Start: 640
• Page End: 642
• Publication Date: 2015-04-01
• Subjects: radio‐over‐fibre -- optical receivers -- phototransistors -- Ge‐Si alloys -- heterojunction bipolar transistors -- millimetre wave bipolar transistors -- low noise amplifiers -- millimetre wave amplifiers; intermediate‐frequency radio‐over‐fibre application -- integrated hybrid photoreceiver -- two‐terminal silicon germanium heterojunction bipolar photo‐transistor -- 2T SiGe HPT -- cascaded low‐noise amplifier -- LNA -- error vector magnitude -- EVM -- OFDM signal -- IEEE 802.15.3c standard -- IF‐RoF distribution mode -- size 850 nm -- gain 20 dB -- gain ‐15 dB -- frequency 5.15 GHz -- bandwidth 1.6 GHz -- frequency 2 GHz -- bit rate 3 Gbit/s -- frequency 60 GHz -- frequency 5 GHz -- SiGe; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2015.0062
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : The first results of an integrated hybrid photo‐receiver based on a 850 nm two‐terminal (2T) silicon germanium (SiGe) heterojunction bipolar photo‐transistor (HPT) for low‐cost radio‐over‐fibre (RoF) applications is presented. A hybrid module was realised with two cascaded low‐noise amplifiers of 20 dB total gain and an SiGe 2T‐HPT exhibiting a −15 dB opto‐microwave gain at 5.15 GHz with a 1.6 GHz bandwidth. A 16% degradation of the error vector magnitude compared with back‐to‐back measurement for the transmission of a 2 GHz OFDM signal at 3 Gbit/s was measured based on the 60 GHz IEEE 802.15.3c standard transposed at the intermediate frequency (IF) of 5 GHz, according to an IF‐RoF distribution mode.