Cite
HARVARD Citation
Kim, H. et al. (2018). Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide. Vacuum. pp. 428-433. [Online].
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Kim, H. et al. (2018). Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide. Vacuum. pp. 428-433. [Online].