Efficient fabrication of MoS2 nanocomposites by water-assisted exfoliation for nonvolatile memories. Issue 10 (28th April 2021)

• Record Type: Journal Article
• Authors: Wang, Honglei; Cheng, Pengfei; Shi, Jun; Wang, Dong; Wang, Hongguang; Pezoldt, Jörg; Stich, Michael; Chen, Runfeng; van Aken, Peter A.; Huang, Wei; Schaaf, Peter
• Is Part Of: Green chemistry. Volume 23:Issue 10(2021)
• Page Start: 3642
• Page End: 3648
• Publication Date: 2021-04-28
• Subjects: Environmental chemistry -- Industrial applications -- Periodicals; Environmental management -- Periodicals; 660
• DOI: 10.1039/d1gc00162k
• Languages: English
• ISSNs: 1463-9262

Abstract

Abstract : A new method for the scalable synthesis of carboxylated chitosan (CC)/2H-MoS2 nanocomposites via water-assisted exfoliation (WAE) has been developed. Abstract : Efficient and green exfoliation of bulk MoS2 into few-layered nanosheets in the semiconducting hexagonal phase (2H-phase) remains a great challenge. Here, we developed a new method, water-assisted exfoliation (WAE), for the scalable synthesis of carboxylated chitosan (CC)/2H-MoS2 nanocomposites. With facile hand grinding of the CC powder, bulk MoS2 and water followed by conventional liquid-phase exfoliation in water, this method can not only efficiently exfoliate the 2H-MoS2 nanosheets, but also produce two-dimensional (2D) CC/2H-MoS2 nanocomposites. Interestingly, the intercalated CC in MoS2 nanosheets increases the interlayer spacing of 2H-MoS2 to serve as good candidates for the semiconductor devices. 2D CC/2H-MoS2 nanocomposites show superior electronic rectification effects in nonvolatile write-once-read-many-times memory (WORM) behavior with an ON/OFF ratio over 10 3, which can be rationally controlled by the weight ratios of CC and MoS2 . These findings by the WAE method would open tremendous potential opportunities to prepare commercially available semiconducting 2D nanocomposites for promising high-performance device applications.