5‐3: Experimental and Physics‐Based Analysis of Leakage Currents for LTPS TFTs in AMOLED Displays. Issue 1 (28th June 2021)

• Record Type: Journal Article
• Authors: Kim, Keunwoo; Kim, Hanbit; Chu, Jaehwan; Thanh, Tien Nguyen; Lee, Jaeseob; Lee, Dokyeong; Kang, Meejae; Kim, Doona; Kim, Sangsub; Sung, Bummo; Kwak, Hyena; Lee, Yongsu; Kang, Taewook; Chu, Hyeyong; Lee, Changhee; Kwag, Jinoh
• Is Part Of: Digest of technical papers. Volume 52:Issue 1(2021)
• Page Start: 37
• Page End: 40
• Publication Date: 2021-06-28
• Subjects: LTPS TFTs -- Leakage currents -- Gate-Induced-Drain-Leakage (GIDL) current -- Thermal generation current -- Bipolar-junction transistor (BJT) current -- Equivalent oxide thickness (EOT); Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.14604
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : This paper presents extremely‐low leakage technologies in low‐temperature polysilicon (LTPS) TFTs. Experimental and physics‐based analysis of leakage currents, emphasizing the effects of process technologies and device design, are described. Small‐geometry TFTs, controlled by optimal LTPS process, dramatically reduce off‐state leakage current (Ioff ) by suppressing gate‐induced drain leakage (GIDL) and thermal generation currents, thus potentially offering lower frame rate operations by reducing IC clock power. Numerical device simulations, supplemented by physics‐based analysis, are performed to corroborate the remarkable low‐Ioff experimental results as well as more‐than‐twice enhanced on‐state current (Ion ) in optimized LTPS devices.