Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings. (24th June 2021)

• Record Type: Journal Article
• Authors: Matys, Maciej; Ishida, Takashi; Nam, Kyung Pil; Sakurai, Hideki; Kataoka, Keita; Narita, Tetsuo; Uesugi, Tsutomu; Bockowski, Michal; Nishimura, Tomoaki; Suda, Jun; Kachi, Tetsu
• Is Part Of: Applied physics express. Volume 14:Number 7(2021)
• Publication Date: 2021-06-24
• Subjects: GaN -- Power devices -- termination; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac0b09
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: A nearly-ideal edge termination for GaN p–n junctions was designed and demonstrated using Mg-ions implanted field limiting rings (FLRs). The FLRs were fabricated via the ultra-high-pressure annealing process after implanting Mg-ions into the etched n-type region outside the main p–n junction. The results of the technology computer-aided design simulation indicate that by optimizing the space and width of the rings, the breakdown voltage (BV) can be increased by over 90% of the ideal parallel plane BV (973 V). Accordingly, the fabricated diodes exhibited low leakage current and a BV of 897 V (92% of the ideal BV).