Forbidden X-ray diffraction of highly B doped diamond substrate. (24th June 2021)

• Record Type: Journal Article
• Authors: Kouda, K.; Sato, Y.; Takeuchi, M.; Takahashi, H.; Shikata, S.
• Is Part Of: Japanese journal of applied physics. Volume 60:Number 7(2021)
• Publication Date: 2021-06-24
• Subjects: diamond -- B doping -- HPHT -- forbidden diffraction -- X-ray topography -- p+; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ac0b23
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: The (222) forbidden diffraction of a highly B doped high-pressure high-temperature (HPHT) diamond crystal was investigated by precise mapping using synchrotron radiation X-ray diffraction. The intensity ratios of (222) to (111) were high, ranging from 20% to 36% for the high-density dislocation areas with stacking faults (SFs), whereas the intensity ratios for the low-density dislocation areas ranged from 11% to 20%. For the high-density dislocation areas, the intensity distribution was very high in the upper region, which might correspond to the dislocation density along the X-ray path. In contrast, the intensity ratio of high-quality undoped HPHT crystals ranged from 3.0% to 4.3%, which might be due to multiple reflections of the high-quality crystal. The substrate quality can be conveniently investigated prior to device fabrication by examining the intensity of the forbidden diffraction using laboratory X-ray diffraction equipment.