Cite
HARVARD Citation
Pathak, J. et al. (2019). Analysis of 14nm technology node In0.53Ga0.47As nFinFET integrated with In0.52Al0.48As cap layer for high-speed circuits. International journal of electronics. 106 (10), pp. 1514-1529. [Online].
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Pathak, J. et al. (2019). Analysis of 14nm technology node In0.53Ga0.47As nFinFET integrated with In0.52Al0.48As cap layer for high-speed circuits. International journal of electronics. 106 (10), pp. 1514-1529. [Online].