Memristors based on TiOx/HfOx or AlOx/HfOx Multilayers with Gradually Varied Thickness. Issue 6 (17th March 2021)

• Record Type: Journal Article
• Authors: Yin, Binfeng; Wang, Yongzhi; Xie, Guancai; Guo, Beidou; Gong, Jian Ru
• Is Part Of: Physica status solidi. Volume 15:Issue 6(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-03-17
• Subjects: forming-free -- HfOx -- memristors -- multilayers -- self-compliance; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.202000607
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : As a fourth fundamental two‐terminal circuit element, memristors have received great research interest as resistive random access memory (RRAM). Herein, a new memristor structure based on TiO x /HfO x or AlO x /HfO x multilayers with gradually varied thickness as the switching material is fabricated. The devices show forming‐free, self‐compliance, reliable multilevel resistive switching, and low switching voltage properties, and are promising for applications in future advanced integrated circuits. Abstract : A novel memristor based on multilayer TiO x /HfO x or AlO x /HfO x with gradually varied thickness simultaneously realizes the properties of forming‐free, multilevel resistive switching, low switching voltage, and self‐compliance.