Enhanced Raman Scattering for Probing Near‐Field Distribution in All‐Dielectric Nanostructures. Issue 6 (1st May 2021)

• Record Type: Journal Article
• Authors: Zograf, George; Baryshnikova, Kseniia; Petrov, Mihail; Makarov, Sergey
• Is Part Of: Advanced photonics research. Volume 2:Issue 6(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-05-01
• Subjects: nanophotonics -- near-field distribution -- optical resonances -- Raman scattering -- silicon; Photonics -- Periodicals; 621.36505
• DOI: 10.1002/adpr.202000139
• Languages: English
• ISSNs: 2699-9293

Abstract

Abstract : Resonant all‐dielectric nanophotonic structures have recently demonstrated enhancement of light emission and localization of near‐fields outside and inside the nanoresonators of various functionality. However, probing of the near‐field is still a time‐consuming and challenging procedure, requiring near‐field optical microscopy or cathodoluminescence approaches. On the contrary, inherent light emission such as Raman scattering from all‐dielectric nanostructures can provide important information on their resonant properties. Herein, probing of near‐field spatial distribution around a silicon trimer qualitatively using far‐field excitation of Raman scattering is demonstrated. The geometry of a single excitation and collection objective with lateral scanning is implemented. With this technique, switching near‐field distribution in the silicon trimer by changing the polarization of the incident light is observed. The full‐wave numerical simulations support the observed experimental results. It is believed that such an approach will be useful for near‐field probing of various all‐dielectric resonant nanostructures with a simple far‐field optical scheme. Abstract : Herein, probing of near‐field spatial distribution around a silicon oligomer is demonstrated using far‐field excitation of Raman scattering from the design via simple focusing and signal collection with the same objective. Switching of near‐field distribution by changing the polarization of the incident light and comparison with full‐wave numerical simulations allow for verification of the developed experimental technique.