Threshold Switching: Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications (Adv. Funct. Mater. 6/2018). (5th February 2018)

• Record Type: Journal Article
• Authors: Wang, Zhongrui; Rao, Mingyi; Midya, Rivu; Joshi, Saumil; Jiang, Hao; Lin, Peng; Song, Wenhao; Asapu, Shiva; Zhuo, Ye; Li, Can; Wu, Huaqiang; Xia, Qiangfei; Yang, J. Joshua
• Is Part Of: Advanced functional materials. Volume 28:Number 6(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-02-05
• Subjects: diffusive memristors -- electrochemical metallization -- neuromorphic computing -- resistive switching -- threshold switching; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201870036
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Threshold switching memristors with Ag or Cu active metal species feature a spontaneous rupture of conduction channels. As reviewed by Huaqiang Wu, Qiangfei Xia, J. Joshua Yang, and co‐workers in article number 1704862, their unique temporal conductance evolution finds a variety of novel applications in electronics, ranging from building blocks for neuromorphic computing and security solutions, to selector devices in 3D memory arrays.