Carrier transport mechanisms of nickel oxide-based carrier selective contact silicon heterojunction solar cells: Role of wet chemical silicon oxide passivation interlayer. (August 2021)

• Record Type: Journal Article
• Authors: Mudgal, Sapna; Nayak, Mrutyunjay; Singh, Sonpal; Komarala, Vamsi K.
• Is Part Of: Solid state communications. Volume 334/335(2021)
• Publication Date: 2021-08
• Subjects: Carrier-elective contacts -- Charge carrier transport -- Temperature-dependent analysis -- Silicon oxide -- Interface defects states; Solid state chemistry -- Periodicals; Solid state physics -- Periodicals; Chimie de l'état solide -- Périodiques; Physique de l'état solide -- Périodiques; 530.41
• DOI: 10.1016/j.ssc.2021.114391
• Languages: English
• ISSNs: 0038-1098

Abstract

Abstract: We have investigated the carrier transport mechanisms of Ag/ITO/Nix O/n-Si/LiFx /Al carrier-selective contact (CSC) silicon solar cells without and with chemically grown SiOx passivation interlayer. The carrier transport is dominated by thermionic (Schottky) emission and tunnelling at the high- (>0.4 V) and low-forward (<0.4 V) bias voltage regions, respectively, in the cell with SiOx interlayer. Without intentionally grown SiOx layer, the carrier transport is dominated by the recombination through interface/surface defect states, which is inferred from the smaller activation energy and strong temperature-dependent ideality factors in >0.4 V forward voltage bias region. The C–V analysis is also confirmed the inability to hold the excess photo-generated charge carriers because of poor interface quality of the cell without SiOx than the cell with SiOx . The Nix O/c-Si junction with the SiOx is resulted in higher built-in voltage and better open-circuit voltage representing better interface passivation quality with fewer interface/surface defect states. Highlights: Carrier transport in Ag/ITO/Nix O/SiOx /n-Si/SiOx /LiFx /Al solar cells investigated. Thermionic emission with SiOx at high-forward bias voltage determined transport. Tunnelling with SiOx at low-forward bias voltage region determined transport. Carrier recombination dominated at cell front junction without SiOx passivation layer.