Cite
HARVARD Citation
Miao, Y. et al. (2018). Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering. Materials science in semiconductor processing. pp. 134-140. [Online].
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Miao, Y. et al. (2018). Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering. Materials science in semiconductor processing. pp. 134-140. [Online].