Nanocomposite‐Seeded Epitaxial Growth of Single‐Domain Lithium Niobate Thin Films for Surface Acoustic Wave Devices. Issue 6 (30th March 2021)

• Record Type: Journal Article
• Authors: Paldi, Robynne L.; Qi, Zhimin; Misra, Shikhar; Lu, Juanjuan; Sun, Xing; Phuah, Xin Li; Kalaswad, Matias; Bischoff, Jay; Branch, Darren W.; Siddiqui, Aleem; Wang, Haiyan
• Is Part Of: Advanced photonics research. Volume 2:Issue 6(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-03-30
• Subjects: Au -- LiNbO3 -- oxide-metal nanocomposite -- seed layer -- surface acoustic wave devices; Photonics -- Periodicals; 621.36505
• DOI: 10.1002/adpr.202000149
• Languages: English
• ISSNs: 2699-9293

Abstract

Abstract : Epitaxial lithium niobate (LNO) thin films are an attractive material for devices across a broad range of fields, including optics, acoustics, and electronics. These applications demand high‐quality thin films without in‐plane growth domains to reduce the optical/acoustical losses and optimize efficiency. Twin‐free single‐domain‐like growth has been achieved previously, but it requires specific growth conditions that might be hard to replicate. In this work, a versatile nanocomposite‐seeded approach is demonstrated as an effective approach to grow single‐domain epitaxial lithium niobate thin films. Films are grown through a pulsed laser deposition method and growth conditions are optimized to achieve high‐quality epitaxial film. A comprehensive microstructure characterization is performed and optical properties are measured. A piezoelectric acoustic resonator device is developed to demonstrate the future potential of the nanocomposite‐seeded approach for high‐quality LNO growth for radio frequency (RF) applications. Abstract : Epitaxial lithium niobate thin films are realized through a nanocomposite LiNbO3 –Au seed layer without twin defects. Detailed microstructural characterization and optical properties are explored. An acoustic resonator is developed to demonstrate the potential for device usage of the seed‐layer‐enabled epitaxial thin films as compared with the standard of bulk LiNbO3 wafer currently in use.