Atomically Precise Control of Carbon Insertion into hBN Monolayer Point Vacancies using a Focused Electron Beam Guide. Issue 23 (7th May 2021)

• Record Type: Journal Article
• Authors: Park, Hyoju; Wen, Yi; Li, Sylvia Xin; Choi, Woojin; Lee, Gun‐Do; Strano, Michael; Warner, Jamie H.
• Is Part Of: Small. Volume 17:Issue 23(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-05-07
• Subjects: 2D materials -- ADF‐STEM -- dopants -- hBN; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202100693
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: Precise controlled filling of point vacancies in hBN with carbon atoms is demonstrated using a focused electron beam method, which guides mobile C atoms into the desired defect site. Optimization of the technique enables the insertion of a single C atom into a selected monovacancy, and preferential defect filling with sub‐2 nm accuracy. Increasing the C insertion process leads to thicker 3D C nanodots seeded at the hBN point vacancy site. Other light elements are also observed to bind to hBN vacancies, including O, opening up a wide range of complex defect structures that include B, C, N, and O atoms. The ability to selectively fill point vacancies in hBN with C atoms provides a pathway for creating non‐hydrogenated covalently bonded C molecules embedded in the insulating hBN. Abstract : Site selective filling of vacancy sites in hBN monolayers with carbon atoms is achieved using a focused electron probe as a guide. Carbon atoms are fully bonded in the hBN with minimal strain. Spatial control of this process was demonstrated down to 5 nm precision, opening a way forward to stable embedded Carbon molecules in an insulating hBN host.