Interface Engineering Ti3C2 MXene/Silicon Self‐Powered Photodetectors with High Responsivity and Detectivity for Weak Light Applications. Issue 23 (23rd April 2021)

• Record Type: Journal Article
• Authors: Song, Weidong; Liu, Qing; Chen, Jiaxin; Chen, Zhao; He, Xin; Zeng, Qingguang; Li, Shuti; He, Longfei; Chen, Zhitao; Fang, Xiaosheng
• Is Part Of: Small. Volume 17:Issue 23(2021)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2021-04-23
• Subjects: MXene -- photodetector -- self‐powered -- Ti 3C 2 -- van der Waals heterojunction; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.202100439
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: Interfacial engineering and heterostructures designing are two efficient routes to improve photoelectric characteristics of a photodetector. Herein, a Ti3 C2 MXene/Si heterojunction photodetector with ultrahigh specific detectivity (2.03 × 10 13 Jones) and remarkable responsivity (402 mA W −1 ) at zero external bias without decline as with increasing the light power is reported. This is achieved by chemically regrown interfacial SiOx layer and the control of Ti3 C2 MXene thickness to suppress the dark noise current and improve the photoresponse. The photodetector demonstrates a high light on/off ratio of over 10 6, an outstanding peak external quantum efficiency ( EQE ) of 60.3%, while it maintains an ultralow dark current at 0 V bias. Moreover, the device holds high performance with EQE of over 55% even after encapsulated with silicone, trying to resolve the air stability issue of Ti3 C2 MXene. Such a photodetector with high detectivity, high responsivity, and self‐powered capability is particularly applicable to detect weak light signal, which presents high potential for imaging, communication and sensing applications. Abstract : The chemically regrown SiOx interfacial layer improves the photoresponse and reduces the dark current simultaneously in a Ti3 C2 /Si self‐powered photodetector, which produces ultrahigh specific detectivity (2.03 × 10 13 Jones) and reponsivity (402 mA W −1 ) without decline as increasing the light power, showing high potential for weak light signal applications.