Fast and high photoresponsivity gallium telluride/hafnium selenide van der Waals heterostructure photodiode. Issue 22 (20th May 2021)

• Record Type: Journal Article
• Authors: Afzal, Amir Muhammad; Mumtaz, Shoail; Iqbal, Muhammad Zahir; Iqbal, Muhammad Waqas; Manzoor, Alina; Dastgeer, Ghulam; Iqbal, M. Javaid; Javed, Yasir; Khan, Rajwali; Shad, Naveed Akhtar; Sajid, M. Munir; Zahid, Tausif
• Is Part Of: Journal of materials chemistry. Volume 9:Issue 22(2021)
• Page Start: 7110
• Page End: 7118
• Publication Date: 2021-05-20
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/d1tc00867f
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : A novel and unique GaTe/HfSe2 vdW heterostructure photodiode shows a high photoresponsivity of with an extraordinary external quantum efficiency of 54%. Abstract : Transition metal dichalcogenide (TMD) material-based van der Waals (vdW) heterostructures have gained huge attention due to their superior capabilities and multiple functionalities in electronics and optoelectronic devices. In this work, a gallium telluride/hafnium selenide (GaTe/HfSe2 ) vdW heterostructure with excellent ohmic contacts is studied. A high gate-modulated rectification ratio (RR) of 6.3 × 10 5 is attained. Furthermore, the photovoltaic measurement is performed under the illumination of laser light of a wavelength of 532 nm and various powers (20–100 μW). Its rise and decay times (18 μs & 24 μs) are superior among those of various reported vdW heterostructures. The photoresponsivity of GaTe/HfSe2 is enhanced significantly up to with an external quantum efficiency (EQE = 54%) as compared to those of the various reported vdW heterostructures. Such TMD based heterostructure devices would improve the energy harvesting needs along with the multifunctional logic operations.