A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing. (30th March 2021)
- Record Type:
- Journal Article
- Title:
- A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing. (30th March 2021)
- Main Title:
- A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing
- Authors:
- Deng, Xing
Wang, Si‐Qi
Liu, Yu‐Xiang
Zhong, Ni
He, Yu‐Hui
Peng, Hui
Xiang, Ping‐Hua
Duan, Chun‐Gang - Abstract:
- Abstract: Designing transparent flexible electronics with multi‐biological neuronal functions and superior flexibility is a key step to establish wearable artificial intelligence equipment. Here, a flexible ionic gel‐gated VO2 Mott transistor is developed to simulate the functions of the biological synapse. Short‐term and long‐term plasticity of the synapse are realized by the volatile electrostatic carrier accumulation and nonvolatile proton‐doping modulation, respectively. With the achievement of multi‐essential synaptic functions, an important sensory neuron, nociceptor, is perfectly simulated in our synaptic transistors with all key characteristics of threshold, relaxation, and sensitization. More importantly, this synaptic transistor exhibits high tolerance to the bending deformation, and the cycle‐to‐cycle variations of multi‐conductance states in potentiation and depression properties are maintained within 4%. This superior stability further indicates that our flexible device is suitable for neuromorphic computing. Simulation results demonstrate that high recognition accuracy of handwritten digits (>95%) can be achieved in a convolution neural network built from these synaptic transistors. The transparent and flexible Mott transistor based on electrically‐controlled VO2 metal‐insulator transition is believed to open up alternative approaches to developing highly stable synapses for future flexible neuromorphic systems. Abstract : A flexible Mott synaptic transistor isAbstract: Designing transparent flexible electronics with multi‐biological neuronal functions and superior flexibility is a key step to establish wearable artificial intelligence equipment. Here, a flexible ionic gel‐gated VO2 Mott transistor is developed to simulate the functions of the biological synapse. Short‐term and long‐term plasticity of the synapse are realized by the volatile electrostatic carrier accumulation and nonvolatile proton‐doping modulation, respectively. With the achievement of multi‐essential synaptic functions, an important sensory neuron, nociceptor, is perfectly simulated in our synaptic transistors with all key characteristics of threshold, relaxation, and sensitization. More importantly, this synaptic transistor exhibits high tolerance to the bending deformation, and the cycle‐to‐cycle variations of multi‐conductance states in potentiation and depression properties are maintained within 4%. This superior stability further indicates that our flexible device is suitable for neuromorphic computing. Simulation results demonstrate that high recognition accuracy of handwritten digits (>95%) can be achieved in a convolution neural network built from these synaptic transistors. The transparent and flexible Mott transistor based on electrically‐controlled VO2 metal‐insulator transition is believed to open up alternative approaches to developing highly stable synapses for future flexible neuromorphic systems. Abstract : A flexible Mott synaptic transistor is developed to simulate the functions of a biological synapse. A sensory neuron, nociceptor, is simulated based on multi‐essential synaptic functions. The high recognition accuracy of handwritten digits (>95%) can be achieved, demonstrating that the flexible ionic gel‐gated VO2 Mott transistor opens up alternative approaches to developing highly stable synapses for future flexible neuromorphic systems. … (more)
- Is Part Of:
- Advanced functional materials. Volume 31:Number 23(2021)
- Journal:
- Advanced functional materials
- Issue:
- Volume 31:Number 23(2021)
- Issue Display:
- Volume 31, Issue 23 (2021)
- Year:
- 2021
- Volume:
- 31
- Issue:
- 23
- Issue Sort Value:
- 2021-0031-0023-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2021-03-30
- Subjects:
- flexible electronics -- metal‐insulator transition -- Mott transistors -- nociceptors -- synaptic plasticity
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1616-3028 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adfm.202101099 ↗
- Languages:
- English
- ISSNs:
- 1616-301X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.853900
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 17225.xml