TCAD simulation of a proposed 3D CdZnTe detector. Issue 10 (16th October 2017)

• Record Type: Journal Article
• Authors: Ellakany, Abdelhady A.; Abouelatta, Mohamed; Shaker, Ahmed; Sayah, Gihan T.; El‐Banna, Mohammed
• Is Part Of: Journal of engineering. Volume 2017:Issue 10(2017)
• Page Start: 574
• Page End: 576
• Publication Date: 2017-10-16
• Subjects: cadmium compounds -- technology CAD (electronics) -- computerised instrumentation -- sensors -- leakage currents; 2D detector -- very low leakage current -- three‐dimensional detector -- Γ‐ray detection -- hard X‐ray detection -- semiconductor material -- room temperature detector -- 3D detector -- TCAD simulation -- voltage 200 V -- current 0.8 nA -- CdZnTe; Engineering -- Periodicals; Engineering; Electronic journals; Periodicals; 620.005
• DOI: 10.1049/joe.2017.0342
• Languages: English
• ISSNs: 2051-3305

Abstract

Abstract : Cadmium zinc telluride (CdZnTe) detectors are potential replacements for traditional room temperature detectors, such as silicon (Si), in many applications. CdZnTe has been considered as a promising semiconductor material for hard X‐ray and Γ ‐ray detection because the stopping power of CdZnTe is better than traditional materials. To exploit them for practical applications, their behaviour under harsh conditions must be fully characterised and understood. In this study, the electrical characteristics of the CdZnTe three‐dimensional (3D) detector are comprehensively studied through TCAD simulations. The very low leakage current, which is about 5.5 pA at 200 V, allows applying higher bias voltages than possible with traditional two‐dimensional (2D) detectors. Moreover, the effect of the temperature on the leakage current is studied. Additionally, the collection time is found to be about 2 ns and the amplitude of the current is 0.8 nA at 200 V. The obtained results prove the applicability of the CdZnTe 3D detector under various operating conditions.