Device and circuit performance analysis of double gate junctionless transistors at Lg = 18 nm. Issue 3 (31st March 2014)

• Record Type: Journal Article
• Authors: Sahu, Chitrakant; Singh, Jawar
• Is Part Of: Journal of engineering. Volume 2014:Issue 3(2014)
• Page Start: 105
• Page End: 110
• Publication Date: 2014-03-31
• Subjects: CMOS integrated circuits -- field effect transistors -- SRAM chips -- technology CAD (electronics) -- semiconductor device models -- transient response -- invertors; double gate junctionless transistors -- DG inversion‐mode FETs -- field effect transistors -- drain‐induced barrier lowering -- steep subthreshold slope -- lower OFF state current -- pass gate logic -- inverter circuit -- static random access memory -- complementary metal‐oxide semiconductor configuration -- CMOS configuration -- transient response -- SRAM cell stability -- coupled device‐circuit methodology -- ATLAS TCAD mixed‐mode simulator; Engineering -- Periodicals; Engineering; Electronic journals; Periodicals; 620.005
• DOI: 10.1049/joe.2013.0269
• Languages: English
• ISSNs: 2051-3305

Abstract

Abstract : The design and characteristics of double‐gate (DG) junctionless (JL) devices are compared with the DG inversion‐mode (IM) field effect transistors (FETs) at 45 nm technology node with effective channel length of 18 nm. The comparison are performed at iso‐ V th for both n‐ and p‐type of devices. The JL device shows lower drain‐induced barrier lowering, steep subthreshold slope and lower OFF state current. For the first time, the authors demonstrate a pass gate (PG) logic, inverter circuit and static random access memory (SRAM) stability analysis using JL devices, rather than a complementary metal‐oxide semiconductor (CMOS) configuration. They observed that transient response of JL PG configuration is similar to that of conventional CMOS PGs. JL inverter also shows similar transient characteristics with 25% reduction in delay and 12% improvement in 6 T SRAM cell stability compared with IMFETs, which shows large potential in digital circuit applications. The simulations were performed using coupled device‐circuit methodology in ATLAS technology aided computer design (TCAD) mixed‐mode simulator.