2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 104 cm2 V−1 s−1. Issue 51 (4th November 2019)
- Record Type:
- Journal Article
- Title:
- 2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 104 cm2 V−1 s−1. Issue 51 (4th November 2019)
- Main Title:
- 2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene‐Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 104 cm2 V−1 s−1
- Authors:
- Du, Juan
Shi, Jun‐jie - Abstract:
- Abstract: Graphene, a star 2D material, has attracted much attention because of its unique properties including linear electronic dispersion, massless carriers, and ultrahigh carrier mobility (10 4 –10 5 cm 2 V −1 s −1 ). However, its zero bandgap greatly impedes its application in the semiconductor industry. Opening the zero bandgap has become an unresolved worldwide problem. Here, a novel and stable 2D Ruddlesden–Popper‐type layered chalcogenide perovskite semiconductor Ca3 Sn2 S7 is found based on first‐principles GW calculations, which exhibits excellent electronic, optical, and transport properties, as well as soft and isotropic mechanical characteristics. Surprisingly, it has a graphene‐like linear electronic dispersion, small carrier effective mass (0.04 m0 ), ultrahigh room‐temperature carrier mobility (6.7 × 10 4 cm 2 V −1 s −1 ), Fermi velocity (3 × 10 5 m s −1 ), and optical absorption coefficient (10 5 cm −1 ). Particularly, it has a direct quasi‐particle bandgap of 0.5 eV, which realizes the dream of opening the graphene bandgap in a new way. These results guarantee its application in infrared optoelectronic and high‐speed electronic devices. Abstract : A novel and stable 2D Ruddlesden–Popper‐type layered chalcogenide perovskite semiconductor, Ca3 Sn2 S7, with graphene‐like linear electronic dispersion, small carrier effective mass (0.04 m0 ), and ultrahigh carrier mobility (6.7 × 10 4 cm 2 V −1 s −1 ), Fermi velocity (3 × 10 5 m s −1 ), and optical absorptionAbstract: Graphene, a star 2D material, has attracted much attention because of its unique properties including linear electronic dispersion, massless carriers, and ultrahigh carrier mobility (10 4 –10 5 cm 2 V −1 s −1 ). However, its zero bandgap greatly impedes its application in the semiconductor industry. Opening the zero bandgap has become an unresolved worldwide problem. Here, a novel and stable 2D Ruddlesden–Popper‐type layered chalcogenide perovskite semiconductor Ca3 Sn2 S7 is found based on first‐principles GW calculations, which exhibits excellent electronic, optical, and transport properties, as well as soft and isotropic mechanical characteristics. Surprisingly, it has a graphene‐like linear electronic dispersion, small carrier effective mass (0.04 m0 ), ultrahigh room‐temperature carrier mobility (6.7 × 10 4 cm 2 V −1 s −1 ), Fermi velocity (3 × 10 5 m s −1 ), and optical absorption coefficient (10 5 cm −1 ). Particularly, it has a direct quasi‐particle bandgap of 0.5 eV, which realizes the dream of opening the graphene bandgap in a new way. These results guarantee its application in infrared optoelectronic and high‐speed electronic devices. Abstract : A novel and stable 2D Ruddlesden–Popper‐type layered chalcogenide perovskite semiconductor, Ca3 Sn2 S7, with graphene‐like linear electronic dispersion, small carrier effective mass (0.04 m0 ), and ultrahigh carrier mobility (6.7 × 10 4 cm 2 V −1 s −1 ), Fermi velocity (3 × 10 5 m s −1 ), and optical absorption coefficient (10 5 cm −1 ), is found. Particularly, its direct quasi‐particle bandgap of 0.5 eV realizes the dream of opening the graphene bandgap in a new way. … (more)
- Is Part Of:
- Advanced materials. Volume 31:Issue 51(2019)
- Journal:
- Advanced materials
- Issue:
- Volume 31:Issue 51(2019)
- Issue Display:
- Volume 31, Issue 51 (2019)
- Year:
- 2019
- Volume:
- 31
- Issue:
- 51
- Issue Sort Value:
- 2019-0031-0051-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2019-11-04
- Subjects:
- Ca3Sn2S7 monolayers -- direct bandgap semiconductors -- graphene‐like linear electronic dispersion -- strong optical absorption -- ultrahigh carrier mobility
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1521-4095 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adma.201905643 ↗
- Languages:
- English
- ISSNs:
- 0935-9648
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.897800
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 17162.xml