Characterization of CNT and It's carrier mobility dependency on diameter in Back-Gated CNT-FET. (2021)

• Record Type: Journal Article
• Authors: Pavan Kalyan, GV.; Sarkar, Argha; Aswini, C; Chakraborty, Pinaki
• Is Part Of: Materials today. Volume 45:Part 4(2021)
• Page Start: 3869
• Page End: 3873
• Publication Date: 2021
• Subjects: Carbon nanotube -- Chiral indices -- Characterization -- Mobility -- Field effect transistor; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2020.06.274
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: Based on the chiral indices, different structures like an arm chair, zigzag and chiral are formed and carbon nanotube (CNT) shows semiconducting and metallic properties. This is a very interesting phenomenon in the field of nanoelectronics research. Some fundamental parameters like diameter, bandgap, number of hexagons in a unit cell, and temperature affect the carbon nanotube properties. These parameters may also change the carrier mobility in the carbon nanotube based back-gated field effect transistor (FET). Diameter (directly proportional with mobility) and temperature (inversely proportional to the mobility) dependency is very much important on charge density.