Size‐controlled graphene‐based materials prepared by annealing of pitch‐based cokes: G band phonon line broadening effects due to high pressure, crystallite size, and merging with D′ band. (13th August 2019)

• Record Type: Journal Article
• Authors: Pillet, G.; Sapelkin, A.; Bacsa, W.; Monthioux, M.; Puech, P.
• Is Part Of: Journal of Raman spectroscopy. Volume 50:Number 12(2019)
• Page Start: 1861
• Page End: 1866
• Publication Date: 2019-08-13
• Subjects: carbon -- cokes -- distortion -- high pressure -- linewidth; Raman spectroscopy -- Periodicals; 535.846
• DOI: 10.1002/jrs.5723
• Languages: English
• ISSNs: 0377-0486

Abstract

Abstract: The influence of high pressure in the range of 0–15 GPa on the linewidth and the position of the Raman G band is investigated for graphene‐based materials with controlled crystallite sizes, L a, obtained from pitch‐based cokes by increasing annealing temperature. It is observed that the linewidth of the G band increases significantly above the critical pressure, Pc ≈ 10 GPa, for all samples, whereas at atmospheric pressure, the linewidth neither depends on variation in the measurement temperature (<400 K) nor on excitation wavelengths. The crystallite size (varied using different annealing temperatures) is found not to influence the critical pressure associated with the modification of carbon hybridization. At the same time, the G band linewidth increases significantly for smaller crystallite sizes depending on the annealing temperature at atmospheric pressure due to the merging of the D′ and G phonon bands. This merging of the bands can be explained by a single phonon involved in two physical Raman processes, which cannot be discriminated. Abstract : High pressure affects the linewidth of the G band for all defective carbon materials in the same way. At a pressure around 10 GPa, the linewidth starts to increase. This behavior is consistent with similar distortions observed on bulk carbon materials. The merge of D′ and G band for crystallite size around 6–7 nm is due to intrinsic Raman process. After this merge and the associated increase of about 20 cm −1, the linewidth continues to increase with decreasing crystallite size.