All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response. (8th September 2011)

• Record Type: Journal Article
• Authors: Gu, Guiru; Ling, Yunfeng; Liu, Runyu; Vasinajindakaw, Puminun; Lu, Xuejun; Jones, Carissa S.; Shih, Wu-Sheng; Kayastha, Vijaya; Downing, Nick L.; Han, Xuliang; Subbaraman, Harish; Pham, Dan; Chen, Ray T.; Chen, Maggie Yihong; Berger, Urs; Renn, Mike
• Other Names: Khin Yap Yoke Academic Editor.
• Is Part Of: Journal of nanotechnology. Volume 2011(2011)
• Publication Date: 2011-09-08
• Subjects: Nanotechnology -- Periodicals; Nanotechnology; Nanotechnology; Periodicals; Periodicals; 620.5
• DOI: 10.1155/2011/823680
• Languages: English
• ISSNs: 1687-9503

Abstract

Abstract : We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 10 3 and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the special band structure and the one-dimensional (1D) quantum confined density of state (DOS) of CNTs. The bias-independent transconductance promises modulation linearity for analog electronics.