Signal Integrity Analysis in Carbon Nanotube Based Through-Silicon Via. (1st March 2014)

• Record Type: Journal Article
• Authors: Majumder, Manoj Kumar; Kumari, Archana; Kaushik, Brajesh Kumar; Manhas, Sanjeev Kumar
• Other Names: Goel Ashok Academic Editor.
• Is Part Of: Active and passive electronic components. Volume 2014(2014)
• Publication Date: 2014-03-01
• Subjects: Electronics -- Periodicals; Passive components -- Periodicals; Electronic apparatus and appliances -- Periodicals; 621.381505
• DOI: 10.1155/2014/524107
• Languages: English
• ISSNs: 0882-7516

Abstract

Abstract : Development of a reliable 3D integrated system is largely dependent on the choice of filler materials used in through-silicon vias (TSVs). This research paper presents carbon nanotube (CNT) bundles as prospective filler materials for TSVs and provides an analysis of signal integrity for different single- (SWCNT), double- (DWCNT), and multi-walled CNT (MWCNT) bundle based TSVs. Depending on the physical configuration of a pair of TSVs, an equivalent electrical model is employed to analyze the in-phase and out-phase delays. It is observed that, using an MWCNT bundle (with number of shells = 10), the overall in-phase delays are reduced by 96.86%, 92.33%, 78.35%, and 32.72% compared to the bundled SWCNT, DWCNT, 4-shell MWCNT, and 8-shell MWCNT, respectively; similarly, the overall reduction in out-phase delay is 85.89%, 73.38%, 45.92%, and 12.56%, respectively.