Simple Synthesis and Growth Mechanism of Core/Shell CdSe/SiOx Nanowires. (1st March 2010)

• Record Type: Journal Article
• Authors: Dai, Guozhang; Yang, Shengyi; Yan, Min; Wan, Qiang; Zhang, Qinglin; Pan, Anlian; Zou, Bingsuo
• Other Names: Ma Renzhi Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2010(2010)
• Publication Date: 2010-03-01
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2010/427689
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : Core-shell-structured CdSe/SiO x nanowires were synthesized on an equilateral triangle Si (111) substrate through a simple one-step thermal evaporation process. SEM, TEM, and XRD investigations confirmed the core-shell structure; that is, the core zone is single crystalline CdSe and the shell zone is SiO x amorphous layer and CdSe core was grown along (001) direction. Two-stage growth process was present to explain the growth mechanism of the core/shell nanwires. The silicon substrate of designed equilateral triangle providing the silicon source is the key factor to form the core-shell nanowires, which is significant for fabrication of nanowire-core sheathed with a silica system. The PL of the product studied at room temperature showed two emission bands around 715 and 560 nm, which originate from the band-band transition of CdSe cores and the amorphous SiO x shells, respectively.