Growth Mechanism of Cubic-Silicon Carbide Nanowires. (11th February 2010)

• Record Type: Journal Article
• Authors: Cheong, K. Y.; Lockman, Z.
• Other Names: Shi Donglu Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2009(2009)
• Publication Date: 2010-02-11
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2009/572865
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : Cubic-SiC nanowires were synthesized using activated carbon powder and Si substrate in vacuum at 1200–1350°C for 1–4 hours. The nanowires were grown according to the following proposed mechanisms: (1) diffusion of C/CO into Si substrate, (2) weakening of Si bond and atomic kick-out, (3) formation of Si-C in vapor phase, (4) formation of saturated SiC layer, (5) formation of pyramid-like SiC nanostructure, and (6) formation of SiC nanowires.