An Analytic Model for Estimating the Length of the Velocity Saturated Region in Double Gate Bilayer Graphene Transistors. (11th November 2013)

• Record Type: Journal Article
• Authors: Saeidmanesh, M.; Kiani, M. J.; Siew, Kang Eng; Akbari, E.; Karimi, H.; Ismail, Razali
• Other Names: Kang Zhenhui Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2013(2013)
• Publication Date: 2013-11-11
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2013/560252
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : An analytical model for surface potential of asymmetric double gate Bilayer Graphene (BLG) transistors is presented on the basis of two-dimensional Poisson's equation. To verify the accuracy of potential model, the modelling data are compared with the simulation data of FlexPDE program and a good agreement is observed. From surface potential expression, the device behaviour in velocity saturation region is investigated. As a result, lateral electric field and length of velocity saturation region (L d ) are formulated and their dependence on several device parameters is carefully examined.