Comparison of conventional and cascode drive of SiC BJTs. Issue 17 (15th April 2019)

• Record Type: Journal Article
• Authors: McNeill, Neville; Broadmeadow, Mark A. H.; Roscoe, Nina; Finney, Stephen
• Is Part Of: Journal of engineering. Volume 2019:Issue 17(2019)
• Page Start: 3793
• Page End: 3796
• Publication Date: 2019-04-15
• Subjects: driver circuits -- silicon compounds -- wide band gap semiconductors -- bipolar transistor circuits -- MOSFET circuits; SiC -- voltage 600.0 V -- current 2.5 A -- buck converter -- bipolar junction transistor -- cascode variant -- low‐voltage silicon metal‐oxide‐semiconductor field‐effect transistor -- BJT -- cascode driver circuits -- simple conventional driver circuits; Engineering -- Periodicals; Engineering; Electronic journals; Periodicals; 620.005
• DOI: 10.1049/joe.2018.8034
• Languages: English
• ISSNs: 2051-3305

Abstract

Abstract : This study compares simple conventional and cascode driver circuits for the SiC bipolar junction transistor (BJT). A low‐voltage silicon metal‐oxide‐semiconductor field‐effect transistor is used in the emitter of the BJT to realise the cascode variant. The circuits are experimentally evaluated when switching a current of 2.5 A and a voltage of 600 V in a buck converter.