Cite
HARVARD Citation
Zheng, C. et al. (2013). Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate. TheScientificWorldjournal. p. . [Online].
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Zheng, C. et al. (2013). Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate. TheScientificWorldjournal. p. . [Online].