Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light‐emitting diodes. Issue 10 (2nd October 2015)

• Record Type: Journal Article
• Authors: Zhang, Shaofei; Laleyan, David Arto; Wang, Qi; Mi, Zetian
• Is Part Of: Journal of engineering. Volume 2015:Issue 10(2015)
• Page Start: 299
• Page End: 301
• Publication Date: 2015-10-02
• Subjects: nanowires -- gallium compounds -- indium compounds -- III‐V semiconductors -- wide band gap semiconductors -- light emitting diodes -- epitaxial growth; GaN‐InGaN -- epitaxial growth -- design -- hole transport -- axial nanowire light‐emitting diodes -- carrier transport -- nanowire geometry; Engineering -- Periodicals; Engineering; Electronic journals; Periodicals; 620.005
• DOI: 10.1049/joe.2014.0349
• Languages: English
• ISSNs: 2051-3305

Abstract

Abstract : The authors have investigated the impact of nanowire geometry on the carrier transport in axial indium gallium nitride and gallium nitride (InGaN/GaN) nanowire light‐emitting diodes (LEDs). The results reveal that hole transport depends critically on the nanowire geometry. With identical material parameters, the carrier transport process can be varied with different nanowire geometry designs, which lead to different overall device performance. This study offers important insight into the design and epitaxial growth of high‐performance nanowire LEDs.