A 2.1 ppm/°C, 0.55–2.4 V, 5.6 nW, 235 mV, CMOS-only subthreshold voltage reference. (July 2021)

• Record Type: Journal Article
• Authors: Duan, Quanzhen; Lin, Chenxi; Liu, Peiju; Huang, S.; Meng, Zhen
• Is Part Of: Microelectronics journal. Volume 113(2021)
• Publication Date: 2021-07
• Subjects: Voltage reference -- High precision -- Ultra-low-power consumption -- CMOS-only -- Subthreshold; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2021.105060
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: This study presents a high-precision, ultra-low-power, and CMOS-only subthreshold voltage reference. V PTAT with a positive temperature coefficient (TC) and V CTAT with a negative TC were generated to obtain a low-temperature dependence voltage reference. V PTAT was implemented using two standard-threshold voltage (STV) transistors working in the subthreshold region, while, V CTAT was implemented by a high-threshold-voltage (HTV) transistor and an STV transistor biased in the subthreshold region to obtain a ΔV GS with a negative TC. The voltage reference circuit was implemented via a standard 0.18- μ m CMOS process with the core size around 0.022 mm 2 . The pre and post simulation results showed an average output reference voltage of around 235 mV with different supply voltages. Under a temperature range of −30 to 80 °C and the supply voltage of 0.55 V, the best TCs were as low as 2.1 and 7.6 ppm/°C for pre and post simulations, respectively. The total power consumption was only 5.6 nW when the supply voltage is 0.55 V.