Enhanced photocatalytic H2 production activity of CdZnS with stacking faults structure assisted by ethylenediamine and NiS. (14th June 2018)
- Record Type:
- Journal Article
- Title:
- Enhanced photocatalytic H2 production activity of CdZnS with stacking faults structure assisted by ethylenediamine and NiS. (14th June 2018)
- Main Title:
- Enhanced photocatalytic H2 production activity of CdZnS with stacking faults structure assisted by ethylenediamine and NiS
- Authors:
- Chen, Meiqing
Wu, Pingxiao
Zhu, Yajie
Yang, Shanshan
Lu, Yonghong
Lin, Zhang - Abstract:
- Abstract: In order to enhance the visible light-driven photocatalytic H2 production activity of CdZnS, an ethylenediamine-assisted hydrothermal pathway was used to synthesize CdxZn1-xS(en) with different Cd/Zn molar ratios. It was found out that the prepared Cd0.5 Zn0.5 S(en) possessed the highest photocatalytic H2 production rate of 13539.0 μmol h −1 g −1 that was higher than that of CdZnS. The key to this achievement could be ascribed to the stacking faults formation, the optimum band gap with conduction band position and small crystallite size. Based on this, Cd0.5 Zn0.5 S(en) was modified by NiS for further improving the activity. The obtained Cd0.5 Zn0.5 S(en)NiS with NiS loading content of 0.25 wt% exhibited much higher photocatalytic H2 production rate, reaching up to 38187.7 μmol h −1 g −1 that were among the highest efficiencies for semiconductor photocatalysts ever reported. It was confirmed that the nanosized NiS anchored on Cd0.5 Zn0.5 S(en) interface, acting as electron trapping sites, attributed to the spatial suppressions of electron-hole recombination. Meanwhile, the NiS loaded on the surface optimized the photogenerated electron transfer pathway between the semiconductor materials that gives rise to significantly enhanced photocatalytic activity. This study would put forward a facile method for developing high photocatalytic activity and low-cost catalytic material for H2 production, which provide a new thought to address the global energy crisis and theAbstract: In order to enhance the visible light-driven photocatalytic H2 production activity of CdZnS, an ethylenediamine-assisted hydrothermal pathway was used to synthesize CdxZn1-xS(en) with different Cd/Zn molar ratios. It was found out that the prepared Cd0.5 Zn0.5 S(en) possessed the highest photocatalytic H2 production rate of 13539.0 μmol h −1 g −1 that was higher than that of CdZnS. The key to this achievement could be ascribed to the stacking faults formation, the optimum band gap with conduction band position and small crystallite size. Based on this, Cd0.5 Zn0.5 S(en) was modified by NiS for further improving the activity. The obtained Cd0.5 Zn0.5 S(en)NiS with NiS loading content of 0.25 wt% exhibited much higher photocatalytic H2 production rate, reaching up to 38187.7 μmol h −1 g −1 that were among the highest efficiencies for semiconductor photocatalysts ever reported. It was confirmed that the nanosized NiS anchored on Cd0.5 Zn0.5 S(en) interface, acting as electron trapping sites, attributed to the spatial suppressions of electron-hole recombination. Meanwhile, the NiS loaded on the surface optimized the photogenerated electron transfer pathway between the semiconductor materials that gives rise to significantly enhanced photocatalytic activity. This study would put forward a facile method for developing high photocatalytic activity and low-cost catalytic material for H2 production, which provide a new thought to address the global energy crisis and the environmental contamination. Graphical abstract: Image 1 Highlights: Cdx Zn1-x S(en) nanocrystals were prepared by an ethylenediamine-assisted hydrothermal method. Stacking faults formed inside Cdx Zn1-x S(en) was crucial for photocatalytic H2 evolution. NiS instead of noble metals was used as cocatalyst to modify Cd0.5 Zn0.5 S(en) surface. The photocatalytic activity of Cd0.5 Zn0.5 S loaded by NiS was notably enhanced. As electron trapping sites, NiS can efficiently prevent the recombination of photoexcited charges. … (more)
- Is Part Of:
- International journal of hydrogen energy. Volume 43:Number 24(2018)
- Journal:
- International journal of hydrogen energy
- Issue:
- Volume 43:Number 24(2018)
- Issue Display:
- Volume 43, Issue 24 (2018)
- Year:
- 2018
- Volume:
- 43
- Issue:
- 24
- Issue Sort Value:
- 2018-0043-0024-0000
- Page Start:
- 10938
- Page End:
- 10949
- Publication Date:
- 2018-06-14
- Subjects:
- CdxZn1-xS(en) -- Photocatalytic H2 production -- Stacking faults -- NiS
Hydrogen as fuel -- Periodicals
Hydrogène (Combustible) -- Périodiques
Hydrogen as fuel
Periodicals
665.81 - Journal URLs:
- http://www.sciencedirect.com/science/journal/03603199 ↗
http://www.elsevier.com/journals ↗ - DOI:
- 10.1016/j.ijhydene.2018.04.218 ↗
- Languages:
- English
- ISSNs:
- 0360-3199
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 4542.290000
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 17103.xml