Annealing Effect on the Thermoelectric Properties of Bi2Te3 Thin Films Prepared by Thermal Evaporation Method. (25th November 2013)

• Record Type: Journal Article
• Authors: Lin, Jyun-Min; Chen, Ying-Chung; Lin, Chi-Pi
• Other Names: Ji Liang-Wen Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2013(2013)
• Publication Date: 2013-11-25
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2013/201017
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2 Te3 thin films on SiO2 /Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2 Te3 thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2 Te3 -based thin films were found to be about −132.02 μ V/K and 6.05 μ W/cm·K 2, respectively.