Magnetic Characteristics of Mn-Implanted GaN Nanorods Followed by Thermal Annealing. (3rd April 2012)

• Record Type: Journal Article
• Authors: Yoon, Im Taek; Shon, Yoon; Kwon, Younghae; Park, Young S.; Park, Chang Soo; Kang, Tae Won
• Other Names: Thongtem Somchai Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2012(2012)
• Publication Date: 2012-04-03
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2012/653650
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : We have investigated the magnetic and optical properties of dislocation-free vertical GaN nanorods with diameters of 150 nm grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy followed by Mn ion implantation and annealing. The GaN nanorods are fully relaxed and have a very good crystal quality characterized by extremely strong and narrow photoluminescence excitonic lines near 3.47 eV. For GaMnN nanorods, it can be concluded that the ferromagnetic property of GaMnN nanorod with a Curie temperature over 300 K is associated with the formation of Mn4 Si7 magnetic phase which results from the effects of magnetic and structural disorder introduced by a random incorporation and inhomogeneous distribution of Mn atoms in the porous layer between the nanorods that form precipitates in the Si substrate before or during the annealing step amongst the GaN nanorods.