Thermoelectric Properties of Al-Doped Mesoporous ZnO Thin Films. (19th September 2013)

• Record Type: Journal Article
• Authors: Hong, Min-Hee; Park, Chang-Sun; Seo, Won-Seon; Lim, Young Soo; Lee, Jung-Kun; Park, Hyung-Ho
• Other Names: Park Chan Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2013(2013)
• Publication Date: 2013-09-19
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2013/131537
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : Al-doped mesoporous ZnO thin films were synthesized by a sol-gel process and an evaporation-induced self-assembly process. In this work, the effects of Al doping concentration on the electrical conductivity and characterization of mesoporous ZnO thin films were investigated. By changing the Al doping concentration, ZnO grain growth is inhibited, and the mesoporous structure of ZnO is maintained during a relatively high temperature annealing process. The porosity of Al-doped mesoporous ZnO thin films increased slightly with increasing Al doping concentration. Finally, as electrical conductivity was increased as electrons were freed and pore structure was maintained by inhibiting grain growth, the thermoelectric property was enhanced with increasing Al concentration.