Amorphous Hafnium-Indium-Zinc Oxide Semiconductor Thin Film Transistors. (17th December 2012)

• Record Type: Journal Article
• Authors: Chang, Sheng-Po; Shih, San-Syong
• Other Names: Lin Gong Ru Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2012(2012)
• Publication Date: 2012-12-17
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2012/127646
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : We reported on the performance and electrical properties of co-sputtering-processed amorphous hafnium-indium-zinc oxide ( α -HfIZO) thin film transistors (TFTs). Co-sputtering-processed α -HfIZO thin films have shown an amorphous phase in nature. We could modulate the In, Hf, and Zn components by changing the co-sputtering power. Additionally, the chemical composition of α -HfIZO had a significant effect on reliability, hysteresis, field-effect mobility ( μ FE), carrier concentration, and subthreshold swing (S) of the device. Our results indicated that we could successfully and easily fabricate α -HfIZO TFTs with excellent performance by the co-sputtering process. Co-sputtering-processed α -HfIZO TFTs were fabricated with an on/off current ratio of ~ 10 6, higher mobility, and a subthreshold slope as steep as 0.55 V/dec.