Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μm Technology. (23rd February 2014)

• Record Type: Journal Article
• Authors: Tinajero-Perez, Enrique J.; Molinar-Solis, Jesus Ezequiel; Garcia-Lozano, Rodolfo Z.; Rosales-Quintero, Pedro; Rocha-Perez, Jose M.; Diaz-Sanchez, Alejandro; Morales-Acevedo, Arturo
• Other Names: Picos Rodrigo Academic Editor.
• Is Part Of: Advances in condensed matter physics. Volume 2014(2014)
• Publication Date: 2014-02-23
• Subjects: Condensed matter -- Periodicals; Condensed matter; Periodicals; 530.41
• DOI: 10.1155/2014/632785
• Languages: English
• ISSNs: 1687-8124

Abstract

Abstract : The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 μ m technology are presented. This characterization allows the development, design, and characterization of a new current-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture.