Electrical Properties of Amorphous Titanium Oxide Thin Films for Bolometric Application. (30th November 2013)

• Record Type: Journal Article
• Authors: Ju, Yongfeng; Wang, Mahua; Wang, Yunlong; Wang, Shihu; Fu, Chengfang
• Other Names: Xiang Xia Academic Editor.
• Is Part Of: Advances in condensed matter physics. Volume 2013(2013)
• Publication Date: 2013-11-30
• Subjects: Condensed matter -- Periodicals; Condensed matter; Periodicals; 530.41
• DOI: 10.1155/2013/365475
• Languages: English
• ISSNs: 1687-8124

Abstract

Abstract : We report the electrical conduction mechanism of amorphous titanium oxide thin films applied for bolometers. As the O/Ti ratio varies from 1.73 to 1.97 measured by rutherford backscattering spectroscopy, the resistivity of the films increases from 0.26 Ω cm to 10.1 Ω cm. At the same time, the temperature coefficient of resistivity and activation energy vary from −1.2% to −2.3% and from 0.09 eV to 0.18 eV, respectively. The temperature dependence of the electrical conductivity illustrates a thermally activated conduction behavior and the carrier transport mechanism in the titanium oxide thin films is found to obey the normal Meyer-Neldel Rule in the temperature range from 293 K to 373 K.