A Circuit Model for CMOS Hall Cells Performance Evaluation including Temperature Effects. (15th September 2013)

• Record Type: Journal Article
• Authors: Paun, Maria-Alexandra; Sallese, Jean-Michel; Kayal, Maher
• Other Names: Jung Jan Alexander Academic Editor.
• Is Part Of: Advances in condensed matter physics. Volume 2013(2013)
• Publication Date: 2013-09-15
• Subjects: Condensed matter -- Periodicals; Condensed matter; Periodicals; 530.41
• DOI: 10.1155/2013/968647
• Languages: English
• ISSNs: 1687-8124

Abstract

Abstract : In order to provide the information on their Hall voltage, sensitivity, and drift with temperature, a new simpler lumped circuit model for the evaluation of various Hall cells has been developed. In this sense, the finite element model proposed by the authors in this paper contains both geometrical parameters (dimensions of the cells) and physical parameters such as the mobility, conductivity, Hall factor, carrier concentration, and the temperature influence on them. Therefore, a scalable finite element model in Cadence, for behavior simulation in circuit environment of CMOS Hall effect devices, with different shapes and technologies assessing their performance, has been elaborated.