395 nm Light-Emitting Diode with 647 mW Output Power Realized Using a Double p-Type Aluminum Composition Gradient with Polarization-Induced Hole Doping. Issue 1 (2nd January 2021)

• Record Type: Journal Article
• Authors: Yue, Wenkai; Li, Zhimin; Li, Peixian; Zhou, Xiaowei; Dong, Haichen; Wang, Yanli; Wu, Jinxing; Luo, Xiaoshun; Bai, Junchun
• Is Part Of: Integrated ferroelectrics. Volume 213:Issue 1(2021)
• Page Start: 174
• Page End: 181
• Publication Date: 2021-01-02
• Subjects: 395nm LED -- Al composition gradient layer -- superlattice; Ferroelectric devices -- Periodicals; Integrated circuits -- Periodicals; 537.244805
• DOI: 10.1080/10584587.2020.1859836
• Languages: English
• ISSNs: 1058-4587

Abstract

Abstract: Three p-type layer structures, i.e. a p-GaN layer, a short-period superlattice (SL) insertion layer, and a polarization-induced hole-doped double-aluminum composition gradient layer, were compared in terms of their performance in 395 nm high-power light-emitting diodes (LEDs). The device with the polarization-induced hole-doped double-aluminum composition gradient layer has an operating voltage of 3.34 V and a wall-plug efficiency of 55.3% under a 350 mA injection current. Moreover, devices with the polarization-induced hole-doped double-aluminum composition gradient layer structure have better optical output power than devices with a short-period SL inserted in p-GaN.