SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm. (5th May 2021)

• Record Type: Journal Article
• Authors: Baghdadi, Mohamed; Elwarraki, Elmostafa; Mijlad, Naoual; Ait Ayad, Imane
• Other Names: Morel Herve Academic Editor.
• Is Part Of: Journal of electrical and computer engineering. Volume 2021(2021)
• Publication Date: 2021-05-05
• Subjects: Computer engineering -- Periodicals; Electrical engineering -- Periodicals; 621.3905
• DOI: 10.1155/2021/6665384
• Languages: English
• ISSNs: 2090-0147

Abstract

Abstract : The concept introduced by MathWorks in the Simscape product is the link representation between the SIMSCAPE library components that correspond to physical connections transmitting power. In this paper, a power insulated-gate bipolar transistor (IGBT) model using MATLAB graphical software is reproduced. An electrical IGBT behavior model using the Simscape Electronics library components is developed and analyzed. This model is parameterized using the constructor datasheet to ensure a good representation of the dynamic and static IGBT behaviors. An extraction and optimization studies of the IGBT model parameters using a stochastic algorithm implemented in Matlab are presented. The proposed method is based on the Genetic Algorithm (GA) to perfectly extract and optimize the model parameters using the mathematical model circuit equations and the provided datasheet characteristics. A simulation in the Matlab/Simulink environment and a comparison with the experimental results for an IGBT device example are carried out to demonstrate the proposed model accuracy.