Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process. (20th June 2013)

• Record Type: Journal Article
• Authors: Inoue, Makoto; Nakano, Satoshi; Harada, Hirofumi; Miyamura, Yoshiji; Gao, Bing; Kangawa, Yoshihiro; Kakimoto, Koichi
• Other Names: Lan C. W. Academic Editor.
• Is Part Of: International journal of photoenergy. Volume 2013(2013)
• Publication Date: 2013-06-20
• Subjects: Photochemistry -- Periodicals; Photobiology -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Photochimie; Photobiologie; Chimie physique et théorique; Chemistry, Physical and theoretical; Photobiology; Photochemistry; Electronic journals; Periodicals; 541.35
• DOI: 10.1155/2013/706923
• Languages: English
• ISSNs: 1110-662X

Abstract

Abstract : We studied the effects of cooling process on the generation of dislocations in multicrystalline silicon grown by the vertical Bridgman process. From the temperature field obtained by a global model, the stress relaxation and multiplication of dislocations were calculated using the Haasen-Alexander-Sumino model. It was found that the multiplication of dislocations is higher in fast cooling processes. It was confirmed that residual stress is low at high temperatures because the movement of the dislocations relaxes the thermal strain, while the residual stress increases with decreasing temperature, because of reduced motion of dislocations and formation of a strain field at lower temperatures.