High-Efficiency Si Solar Cell Fabricated by Ion Implantation and Inline Backside Rounding Process. (17th December 2012)

• Record Type: Journal Article
• Authors: Lee, Chien-Ming; Chang, Sheng-Po; Chang, Shoou-Jinn; Wu, Ching-In
• Other Names: Wong Man Shing Academic Editor.
• Is Part Of: International journal of photoenergy. Volume 2012(2012)
• Publication Date: 2012-12-17
• Subjects: Photochemistry -- Periodicals; Photobiology -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Photochimie; Photobiologie; Chimie physique et théorique; Chemistry, Physical and theoretical; Photobiology; Photochemistry; Electronic journals; Periodicals; 541.35
• DOI: 10.1155/2012/670981
• Languages: English
• ISSNs: 1110-662X

Abstract

Abstract : We introduce a novel, high-throughput processing method to produce high-efficiency solar cells via a backside rounding process and ion implantation. Ion implantation combined with a backside rounding process is investigated. The ion implantation process substituted for thermal POCl3 diffusion performs better R sheet uniformity (<3%). The U-4100 spectrophotometer shows that wafers with backside rounding process perform higher reflectivity at long wavelengths. Industrial screen printed (SP) Al-BSF on different etching depth groups was analyzed. SEMs show that increasing etch depth improves back surface field (BSF). The I -V measurement revealed that etching depths of 6 μ m ± 0.1 μ m due to having the highest V OC and I SC, it has the best performance. SEMs also show that higher etching depths also produce uniform Al melting and better BSF. This is in agreement with IQE response data at long wavelengths.