Heteroepitaxial Growth of Ge Nanowires on Si Substrates. (27th February 2012)

• Record Type: Journal Article
• Authors: Artoni, Pietro; Irrera, Alessia; Pecora, Emanuele Francesco; Boninelli, Simona; Spinella, Corrado; Priolo, Francesco
• Other Names: Gourbilleau Fabrice Academic Editor.
• Is Part Of: International journal of photoenergy. Volume 2012(2012)
• Publication Date: 2012-02-27
• Subjects: Photochemistry -- Periodicals; Photobiology -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Photochimie; Photobiologie; Chimie physique et théorique; Chemistry, Physical and theoretical; Photobiology; Photochemistry; Electronic journals; Periodicals; 541.35
• DOI: 10.1155/2012/782835
• Languages: English
• ISSNs: 1110-662X

Abstract

Abstract : Electron beam evaporation has been used to prepare Ge nanowires (NWs) on top of (111) Si substrates. Despite the non-UHV growth conditions, scanning and transmission electron microscopies demonstrate that NWs are single crystal with specific crystallographic growth directions ([111], [110], and [112]). NWs are faceted, exhibiting the lower energy plans on the surface. The faceting depends on the growth direction. Moreover, the detrimental effects for Ge NWs growth of O atoms contamination are discussed. Finally, we describe how a proper preparation of the Au catalyst is able to increase the Ge NW density by a factor of 4, while heteroepitaxy and faceting features are maintained.