A 4–20 GHz, multi‐watt level, fully integrated push–pull distributed power amplifier with wideband even‐order harmonic suppression. Issue 13 (29th July 2019)

• Record Type: Journal Article
• Authors: Nguyen, Thuy T.; Fujii, Kohei; Pham, Anh‐Vu
• Is Part Of: IET microwaves, antennas & propagation. Volume 13:Issue 13(2019)
• Page Start: 2279
• Page End: 2283
• Publication Date: 2019-07-29
• Subjects: III‐V semiconductors -- gallium arsenide -- wideband amplifiers -- distributed amplifiers -- millimetre wave power amplifiers -- harmonics suppression -- HEMT circuits -- millimetre wave field effect transistors; triple‐stacked field‐effect transistor cell -- nonuniform distributed power amplifier topology -- measured second harmonic suppression -- gallium arsenide pseudomorphic high electron mobility transistor process -- wideband even‐order harmonic suppression -- multiwatt level fully integrated push–pull high power distributed amplifier -- size 0.25 mum -- gain 7.0 dB to 10.0 dB -- bandwidth 4 GHz to 20 GHz -- frequency 8 GHz to 40 GHz -- GaAs; Microwaves -- Periodicals; Microwave antennas -- Periodicals; Antennas (Electronics) -- Periodicals; Radio wave propagation -- Periodicals; Microwave communication systems -- Periodicals; 621.381305
• DOI: 10.1049/iet-map.2018.5635
• Languages: English
• ISSNs: 1751-8725

Abstract

Abstract : This study presents the first fully integrated, push–pull, high power distributed amplifier (DA) for wideband applications in 0.25 µm Gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process. A triple‐stacked field‐effect transistor cell is employed for each stage of the DA along with the non‐uniform distributed power amplifier topology to maximise the output power. The experimental results show that the amplifier exhibits from 7 to 10 dB gain with vi30–32 dBm output power at 1 dB compression (P1 dB) and 32–35.4 dBm saturated output power ( P sat ) covering a frequency bandwidth from 4 to 20 GHz. The measured second harmonic suppression is >33 dBc from 8 to 40 GHz at the P1 dB operating condition.