CMOS Ultra-Wideband Low Noise Amplifier Design. (30th April 2013)

• Record Type: Journal Article
• Authors: Yousef, K.; Jia, H.; Pokharel, R.; Allam, A.; Ragab, M.; Kanaya, H.; Yoshida, K.
• Other Names: Hashmi Mohammad S. Academic Editor.
• Is Part Of: International journal of microwave science and technology. Volume 2013(2013)
• Publication Date: 2013-04-30
• Subjects: Radio frequency -- Periodicals; Microwave circuits -- Periodicals; Radiofréquences; Circuits pour micro-ondes; Microwave circuits; Radio frequency; Periodicals; Electronic journals; 621.3813
• DOI: 10.1155/2013/328406
• Languages: English
• ISSNs: 1687-5826

Abstract

Abstract : This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µ m CMOS technology process.