Double Ion Implantation and Pulsed Laser Melting Processes for Third Generation Solar Cells. (27th November 2013)

• Record Type: Journal Article
• Authors: García-Hemme, Eric; García-Hernansanz, Rodrigo; Olea, Javier; Pastor, David; del Prado, Álvaro; Mártil, Ignacio; Wahnón, Perla; Sanchez, Kefrén; Palacios, Pablo; González-Díaz, Germán
• Other Names: Yi Junsin Academic Editor.
• Is Part Of: International journal of photoenergy. Volume 2013(2013)
• Publication Date: 2013-11-27
• Subjects: Photochemistry -- Periodicals; Photobiology -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Photochimie; Photobiologie; Chimie physique et théorique; Chemistry, Physical and theoretical; Photobiology; Photochemistry; Electronic journals; Periodicals; 541.35
• DOI: 10.1155/2013/473196
• Languages: English
• ISSNs: 1110-662X

Abstract

Abstract : In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 10 4 cm −1 in the photons energy range from 1.1 to 0.6 eV.